PART |
Description |
Maker |
NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS SILICON POWER MOS FET
|
California Eastern Labs
|
BZT52C10 BZT52C10-7 BZT52C11 BZT52C11-7 BZT52C12 B |
SURFACE MOUNT ZENER DIODE Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 2.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 7.5 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Dual Negative-Edge-Triggered J-K Flip-Flop With Clear And Preset 16-TSSOP -40 to 85 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算,低反向泄露,低噪声稳压二极 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 36 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 20 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 4.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
|
Diodes, Inc. Diodes Inc. DIODES[Diodes Incorporated]
|
MBM29PDS322BE10PBT MBM29PDS322BE11 MBM29PDS322BE11 |
32M (2M x 16) BIT Page Dual Operation 2M X 16 FLASH 1.8V PROM, 115 ns, PBGA63 32M (2M x 16) BIT Page Dual Operation 32M的(2米16)位页双操作 NEOZED TYPE,400V.10A 2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63 Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
|
Fujitsu Component Limited. Fujitsu, Ltd. FUJITSU LTD
|
TL062-S08-T TL06205 TL062-S08-R TL062L-S08-T TL062 |
LOW POWER DUAL J-FET OPERATIONAL AMPLIFIER
|
UTC[Unisonic Technologies]
|
NE552R479A NE552R479A-T1 NE552R479A-T1-A NE552R479 |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
California Eastern Labs
|
STPS60L45CW STPS60L45C |
LOW DROP POWER SCHOTTKY RECTIFIER Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
|
ST Microelectronics STMicroelectronics
|
BIM5002/GASKET BIM5003/GASKET BIM5004/GASKET BIM50 |
ZENER DIODES Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) SEAL FOR 462-380 Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits SEAL FOR 462-378 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode BOX DIECAST ALUMINIUM 压铸铝合金箱 BOX DIECAST 箱压
|
Glenair, Inc. Harwin PLC
|
PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET From old datasheet system Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
SM4558 |
Dual Low Noise Operation Amplifier
|
OEI
|
IR94558 IR94558N IR94559 IR94559N |
Low Noise Dual Operation Amplifier
|
SHARP[Sharp Electrionic Components]
|